Name: IXSJ80N120R1K
Brand: IXYS
SKU: 238-IXSJ80N120R1K-ND
Price: 240.05 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXSJ80N120R1K
DigiKey Part Number	238-IXSJ80N120R1K-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSJ80N120R1K
Description	1200V 18M (30A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 85A (Tc) 223.2W (Tc) Through Hole ISO247-4L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	23.4mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 18 V
Vgs (Max)	+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds	4556 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	223.2W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	ISO247-4L
Package / Case	TO-247-4