Name: IXSH60N65L2KHV
Brand: IXYS
SKU: 238-IXSH60N65L2KHV-ND
Price: 75.24 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXSH60N65L2KHV
DigiKey Part Number	238-IXSH60N65L2KHV-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSH60N65L2KHV
Description	650V 40M (40A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 60A (Tc) 249W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	53mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs	94.7 nC @ 18 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 600 V
FET Feature	-
Power Dissipation (Max)	249W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4