IXFH66N20Q is Obsolete and no longer manufactured.
Available Substitutes:

Similar

APT20M45BVRG
Microchip Technology
In Stock: 0
Unit Price: $88.54560
Datasheet

Similar

IRFP260MPBF
Infineon Technologies
In Stock: 3,546
Unit Price: $29.10000
Datasheet

Similar

IRFP260NPBF
Infineon Technologies
In Stock: 9,073
Unit Price: $40.20000
Datasheet

Similar

STW40NF20
STMicroelectronics
In Stock: 95
Unit Price: $42.26000
Datasheet

Similar

STW75NF20
STMicroelectronics
In Stock: 4,179
Unit Price: $38.15000
Datasheet
View and Compare All Substitutes
N-Channel 200 V 66A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 200 V 66A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)
HiPerFET_TO-247-3

IXFH66N20Q

DigiKey Part Number
IXFH66N20Q-ND
Manufacturer
IXYS
Manufacturer Product Number
IXFH66N20Q
Description
MOSFET N-CH 200V 66A TO247AD
Customer Reference
Detailed Description
N-Channel 200 V 66A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
HiPerFET™
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD (IXFH)
Package / Case
TO-247-3
Base Product Number
IXFH66
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Obsolete
This product is no longer manufactured. View Substitutes