Name: IRFP4668PBFXKMA1
Brand: Infineon Technologies
SKU: 448-IRFP4668PBFXKMA1-ND
Price: 42.04 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFP4668PBFXKMA1
DigiKey Part Number	448-IRFP4668PBFXKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFP4668PBFXKMA1
Description	TRENCH >=100V PG-TO247-3
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 130A (Tc) 520W Through Hole TO-247AC
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	241 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	10720 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	520W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3