Name: IRFB4229PBFXKMA1
Brand: Infineon Technologies
SKU: 448-IRFB4229PBFXKMA1-ND
Price: 23.81 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFB4229PBFXKMA1
DigiKey Part Number	448-IRFB4229PBFXKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFB4229PBFXKMA1
Description	TRENCH >=100V
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3