IPU80R2K8CEBKMA1 Infineon Technologies | Discrete Semiconductor Products

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IPU80R2K8CEBKMA1
DigiKey Part Number	IPU80R2K8CEBKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPU80R2K8CEBKMA1
Description	MOSFET N-CH 800V 1.9A TO251-3
Customer Reference
Detailed Description	N-Channel 800 V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number	IPU80R