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IPU80R1K4CEBKMA1
DigiKey Part Number	IPU80R1K4CEBKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPU80R1K4CEBKMA1
Description	MOSFET N-CH 800V 3.9A TO251-3
Customer Reference
Detailed Description	N-Channel 800 V 3.9A (Tc) 63W (Tc) Through Hole PG-TO251-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id	3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number	IPU80R