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IPS65R1K0CEAKMA1
DigiKey Part Number	IPS65R1K0CEAKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPS65R1K0CEAKMA1
Description	MOSFET N-CH 650V 4.3A TO251
Customer Reference
Detailed Description	N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Tube
Part Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	328 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	37W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPAK
Base Product Number	IPS65R