PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP60R199CPXKSA1

DigiKey Part Number
448-IPP60R199CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R199CPXKSA1
Description
MOSFET N-CH 650V 16A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R199CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
Base Product Number
In-Stock: 399
Can ship immediately
Not recommended for new design, minimums may apply View Substitutes
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$32.76000$32.76
50$17.02140$851.07
100$16.09360$1,609.36
500$12.81968$6,409.84
1,000$12.10991$12,109.91
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.