Name: IPP339N20NM6AKSA1
Brand: Infineon Technologies
SKU: 448-IPP339N20NM6AKSA1-ND
Price: 27.66 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP339N20NM6AKSA1
DigiKey Part Number	448-IPP339N20NM6AKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP339N20NM6AKSA1
Description	MOSFET
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 6.8A (Ta), 39A (Tc) 3.8W (Ta), 125W (Tc) Through Hole PG-TO220-3-1
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V, 15V
Rds On (Max) @ Id, Vgs	31.8mOhm @ 26A, 15V
Vgs(th) (Max) @ Id	4.5V @ 52µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3