IPB80N08S2L07ATMA1 Infineon Technologies | Discrete Semiconductor Products

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IPB80N08S2L07ATMA1
DigiKey Part Number	IPB80N08S2L07ATMA1TR-ND - Tape & Reel (TR) IPB80N08S2L07ATMA1CT-ND - Cut Tape (CT) IPB80N08S2L07ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB80N08S2L07ATMA1
Description	MOSFET N-CH 75V 80A TO263-3
Customer Reference
Detailed Description	N-Channel 75 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Datasheet	Datasheet
EDA/CAD Models	IPB80N08S2L07ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	233 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IPB80N