Name: IMZA75R027M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZA75R027M1HXKSA1-ND
Price: 108.83 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZA75R027M1HXKSA1
DigiKey Part Number	448-IMZA75R027M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZA75R027M1HXKSA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 750 V 60A (Tj) 234W (Tc) Through Hole PG-TO247-4
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	750 V
Current - Continuous Drain (Id) @ 25°C	60A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	25mOhm @ 24.5A, 20V
Vgs(th) (Max) @ Id	5.6V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 18 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1668 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	234W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4
Package / Case	TO-247-4
Base Product Number	IMZA75R027