IMZA65R057M1HXKSA1
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IMZA65R057M1HXKSA1

DigiKey Part Number
448-IMZA65R057M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R057M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R057M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Vgs(th) (Max) @ Id
5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
133W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
In-Stock: 145
Can ship immediately
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$55.01000$55.01
30$36.97133$1,109.14
120$34.72158$4,166.59
510$32.02194$16,331.19
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.