IPW65R099CFD7AXKSA1
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IMW65R072M1HXKSA1

DigiKey Part Number
448-IMW65R072M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R072M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW65R072M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
94mOhm @ 13.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
744 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
In-Stock: 220
Can ship immediately
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$62.98000$62.98
30$34.32200$1,029.66
120$30.71733$3,686.08
510$28.47108$14,520.25
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.