Name: IMW65R057M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R057M1HXKSA1-ND
Price: 69.48 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW65R057M1HXKSA1
DigiKey Part Number	448-IMW65R057M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R057M1HXKSA1
Description	SILICON CARBIDE MOSFET, PG-TO247
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	IMW65R057M1HXKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	74mOhm @ 16.7A, 18V
Vgs(th) (Max) @ Id	5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Vgs (Max)	+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds	930 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	133W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
Base Product Number	IMW65R