GT52N10T
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G12P10TE

DigiKey Part Number
4822-G12P10TE-ND
Manufacturer
Manufacturer Product Number
G12P10TE
Description
MOSFET P-CH ESD 100V 12A 44.6W T
Customer Reference
Detailed Description
P-Channel 12A (Tc) 40W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
In-Stock: 1,000
MARKETPLACE PRODUCT
Will ship in approximately 5 days from GOFORD SEMICONDUCTOR
FREE SHIPPING on orders of $3,910.00 or more for products shipped by GOFORD SEMICONDUCTOR
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1,000$2.00192$2,001.92
15,000$1.84552$27,682.80
30,000$1.65784$49,735.20
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.