Name: DIW120SIC023-AQ
Brand: Diotec Semiconductor
SKU: 4878-DIW120SIC023-AQ-ND
Price: 718.49 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DIW120SIC023-AQ
DigiKey Part Number	4878-DIW120SIC023-AQ-ND
Manufacturer	Diotec Semiconductor
Manufacturer Product Number	DIW120SIC023-AQ
Description	MOSFET TO-247-3L N 130A 1200V
Manufacturer Standard Lead Time	10 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 125A (Tc) 600W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	DIW120SIC023-AQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diotec Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	23mOhm @ 75A, 18V
Vgs(th) (Max) @ Id	2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6150 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	600W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3