Name: IXFH34N65X2W
Brand: IXYS
SKU: 238-IXFH34N65X2W-ND
Price: 71.27 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXFH34N65X2W
DigiKey Part Number	238-IXFH34N65X2W-ND
Manufacturer	IXYS
Manufacturer Product Number	IXFH34N65X2W
Description	650V 100m 34A X2-Class HiPerFET
Manufacturer Standard Lead Time	29 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 34A (Tc) 540W (Tc) Through Hole TO-247 (IXFH)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	HiPerRF™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	540W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXFH)
Package / Case	TO-247-3