SiSS52DN 30 V N-Channel MOSFET

Vishay’s versatile SiSS52DN 30 V n-channel TrenchFET^® gen V power MOSFET delivers increased power density and efficiency for both isolated and non-isolated topologies, simplifying part selection for designers working with both. Offered in a 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, it features best-in-class on-resistance of 0.95 mΩ at 10 V, a 5% improvement over the previous generation of products. In addition, this MOSFET delivers on-resistance of 1.5 mΩ at 4.5 V while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V (a critical figure of merit (FOM) for MOSFETs used in switching applications) is very low. The SiSS52DN’s FOM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.