Vishay / Siliconix

MaxSiC™ MOSFET

Vishay MOSFETs enable higher performance and superior efficiency for high-power applications

Image of Vishay Siliconix MaxSiC™ MOSFETVishay MaxSiCTM silicon-carbide (SiC) MOSFETs feature a proprietary technology that combines an efficient trade-off of both on-resistance and switching performance while providing a robust device featuring a small parasitic capacitance, improved short-circuit withstand time (SCWT), increased shoot-through immunity, and competitive electric field of gate oxide.

These SiC MOSFETs offer a competitive figure of merit to address market demands in growing applications such as industrial motor drive inverters, photovoltaic (PV) energy conversion and storage systems, onboard chargers, charging stations, servers (datacenters), and uninterruptable power supplies (UPS).

Features
  • Fast switching speed
  • 3 μs short-circuit withstand time
  • 1,200 V drain-source voltage
  • 139 W maximum power dissipation (TC=+25°C)
  • 29 A continuous drain current (TC=+25°C)
  • -55°C to +150°C operating junction temperature range
  • Lead-free and halogen-free
  • Available in a TO-247 3L package
  • RoHS compliant
Applications
  • Chargers
  • Auxiliary motor drives
  • DC/DC converters

MaxSiC MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SILICON CARBIDE MOSFETMXP120A250FW-GE3SILICON CARBIDE MOSFET0 - Immediate$29.12View Details
SILICON CARBIDE MOSFETMXP120A250FL-GE3SILICON CARBIDE MOSFET0 - Immediate$34.77View Details
SILICON CARBIDE MOSFETMXP120A080FW-GE3SILICON CARBIDE MOSFET496 - Immediate$83.80View Details
SILICON CARBIDE MOSFETMXP120A080FL-GE3SILICON CARBIDE MOSFET581 - Immediate$89.40View Details
SILICON CARBIDE MOSFETMXP120A045FW-GE3SILICON CARBIDE MOSFET0 - Immediate$108.70View Details
SILICON CARBIDE MOSFETMXP120A045FL-GE3SILICON CARBIDE MOSFET0 - Immediate$111.89View Details
Published: 2024-09-03

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