Vishay / Siliconix

TrenchFET® Power MOSFET Optimized for Standard Gate Drives

Vishay’s 60 V MOSFET increases efficiency and power density in a PowerPAK® 1212-8S package

Image of Vishay/Siliconix's 60V Power MOSFET Optimized for Standard Gate DrivesVishay's 60 V TrenchFET Gen IV n-channel power MOSFET is the industry’s first MOSFET to be optimized for standard gate drives by delivering maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK 1212-8S package. Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low QOSS and gate charge of 22.5 nC.

Features
  • Maximum on-resistance down to 4 mΩ at 10 V minimizes conduction losses
  • Low QOSS of 34.2 nC and gate charge of 22.5 nC reduce power losses from switching
  • Offered in compact 3.3 mm by 3.3 mm PowerPAK® 1212-8S package
  • 100% RG- and UIS-tested, RoHS-compliant, and halogen-free
Applications
  • Synchronous rectification in AC/DC and DC/DC topologies
  • Primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies
  • Motor drive control and circuit protection in power tools and industrial equipment
  • Battery protection and charging in battery management modules

TrenchFET® 60 V Power MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET N-CH 60V 25A/90.6A PPAKSISS22DN-T1-GE3MOSFET N-CH 60V 25A/90.6A PPAK6092 - Immediate$18.69View Details
Published: 2019-08-14