Vishay Semiconductor - Opto Division

TSHF5211 IR Emitter

Vishay IR emitters deliver higher radiant intensity and faster switching times than previous-generation devices

Image of Vishay Semi Opto TSHF5211 IR EmitterVishay offers 890 nm high-speed infrared (IR) emitting diodes in a clear, untinted leaded plastic package. Based on surface emitter technology, the TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with 50% higher radiant intensity and faster rise and fall times than previous-generation devices. The emitter offers good spectral matching with silicon photodetectors. These emitters are suitable for industrial sensing applications.

Features
  • Package type: leaded
  • Package form: T-1¾
  • Dimensions: Ø 5 mm
  • Leads with stand-off
  • Peak wavelength: λp = 890 nm
  • High reliability
  • High radiant power and instensity
  • Angle of half intensity: ϕ = ±10°
  • Low forward voltage
  • Good spectral matching to Si photodetectors 

TSHF5211 IR Emitter

ImageManufacturer Part NumberDescriptionTypeCurrent - DC Forward (If) (Max)Radiant Intensity (Ie) Min @ IfAvailable QuantityPriceView Details
IR EMITTER DH 890NM 5MM 10DEGTSHF5211IR EMITTER DH 890NM 5MM 10DEGInfrared (IR)100mA150mW/sr @ 100mA3939 - Immediate$4.03View Details
Published: 2024-09-17