VS-SCx0BA120 Silicon Carbide Bridge Modules

Vishay VS-SC50BA120 and VS-SC90BA120 silicon carbide (SiC) bridge modules are designed to deliver exceptional performance and efficiency in high-power applications. These modules utilize advanced SiC Schottky diode technology which offers significant advantages over traditional silicon-based diodes, including virtually no recovery tail and minimal switching losses. The VS-SC50BA120 is rated for 50 A, while the VS-SC90BA120 is rated for 90 A, both with a maximum repetitive reverse voltage of 1,200 V. These modules are housed in the robust SOT-227 package, ensuring reliable operation even in harsh environments. With improved forward voltage (V_F) and efficiency due to thin-wafer technology, these bridge modules are ideal for applications requiring high-speed switching and efficient power conversion.