VS-SCx Silicon Carbide Schottky Barrier Diodes

Vishay 650 V and 1,200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package are designed to deliver high speed and efficiency for high-frequency applications. Vishay devices offer the best trade-off between capacitive charge (Q_C) and forward voltage drop for diodes in their class. The diodes’ low forward voltage drop dramatically reduces conduction loss for increased efficiency, while their low Q_C allows for high-speed switching. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail. With their industry-standard package, the devices offer drop-in replacements for competing solutions.