Gen 4 1200 V SiC FETs for 800 V Bus Applications

onsemi UF4C/SC Generation 4 SiC FET series is based on a unique cascode configuration, rated at 1200 V and available in 23 mΩ to 70 mΩ options. These devices deliver excellent performance figures of merit (FoM) across R_DS(on) x area of 1.35 mΩ cm², R_DS(on) x E_oss of 0.78 Ω µJ, R_DS(on) x C_oss(tr) of 4.5 Ω pF, and R_DS(on) x Q_G of 0.9 Ω nC. They are the optimal power solution for mainstream 800 V bus architectures in on-board chargers for electric vehicles (EVs), industrial battery chargers, industrial power suppliers, DC/DC in solar, and welding machine, UPS, and induction heating applications.

Based on the multiple R_DS(on) and package options available, these devices maximize design flexibility and cost-effectiveness. These devices can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage. Good threshold noise margin is maintained with a true 5 V threshold voltage. Like previous generations, these SiC FETs can be operated from the typical Si IGBT, Si MOSFET, and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp.