Transphorm

TP65H035WSQA Gen III AEC-Q101-Qualified GaN FET

Transphorm's AEC-Q101-qualified 650 V GaN FET is offered at 175°C

Image of Transphorm TP65H035WSQA Gen III AEC-Q101 Qualified GaN FETBuilt using Transphorm's JEDEC-qualified Gen III GaN platform, the high-voltage TP65H035WSQA offers a 35 mΩ on-resistance in a standard TO247 package, allowing for easy drivability. It is also the company's second AEC-Q101-qualified GaN device to join Transphorm's family of power FETs used in various in-production customer applications. For this latest automotive qualification, Transphorm stressed the FET's thermal limits to 175°C, which is 25°C more than the standard AEC-Q101-qualified high-voltage silicon MOSFETs. Coupling this proven reliability with a 4 V threshold and ±20 V gate robustness, the TP65H035WSQA is one of today's highest quality, highest reliability (Q+R) GaN power semiconductors available.

End Market
  • Automotive plug-in hybrid electric vehicles (PHEVs)
  • Battery electric vehicles (BEVs)
  • Broad Industrial
End Applications
  • AC to DC on-board chargers (OBCs)
  • DC to DC converters
  • DC to AC inverter systems

TP65H035WSQA GaN FET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Available QuantityPriceView Details
GANFET N-CH 650V 47.2A TO247-3TP65H035WSQAGANFET N-CH 650V 47.2A TO247-3650 V0 - Immediate$191.15View Details
Published: 2019-04-03

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