Toshiba Electronic Devices and Storage Corporation

UMOS 11 Low Voltage MOSFETs

Toshiba UMOS11 low voltage MOSFETs provide efficient switching, lower losses, and smarter design

Image of Toshiba UMOS11 Low Voltage MOSFETsThe Toshiba low voltage UMOS-11 process is designed to help engineers meet growing demands for power efficiency, compact design, and reliable switching performance.

Built on an improved trench structure, UMOS 11 delivers lower RDS(on), reduced Qoss, and QRR, and better overall switching behavior, making it a strong fit for applications ranging from DC/DC converters and motor drives to server power supplies and other switching power supplies.

This process will cover a wide variety of voltages and packages, from 40 V to 100 V, in 5 mm x 6 mm and 3 mm x 3 mm packages.

Features
  • Lowest on-resistance in family is 0.52 mΩ (max.) (VGS=10 V)
  • Low RDS(ON) x QOSS, and low RDS(ON) x QRR
  • High-efficiency in switched-mode power supplies
  • Tight threshold voltage for reliable operation
  • Built-in high-speed diode offers improved reverse recovery loss
  • High temperature operation up to +175°C
Applications
  • DC/DC converters
  • Switching power supplies (data center servers, communications equipment, and more)
  • Motor controls
  • Load switching
Resources

Image of Toshiba UMOS11 Low Voltage MOSFETs

UMOS 11 Low Voltage MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
N-CH MOSFET, 100 V, 0.0027 OHM@1TPH2R70AR5,LQN-CH MOSFET, 100 V, 0.0027 OHM@19995 - Immediate$12.73View Details
Published: 2025-09-26