SSM10N954L 12 V Common Drain N-channel MOSFET for Battery Protection

Product Highlights > SSM10N954L 12 V Common Drain N-channel MOSFET for Battery Protection

Toshiba Electronic Devices and Storage Corporation

            SSM10N954L 12 V Common Drain N-channel MOSFET for Battery Protection
                    Toshiba's 12 V low on-resistance common-drain MOSFETs help battery-driven devices
    

Image of Toshiba's SSM10N954L 12V Common Drain N-channel MOSFET for Battery Protection Toshiba’s SSM10N954L is a 12 V common-drain N-channel MOSFET designed for battery protection circuits used for Lithium-ion (Li-ion) battery packs for mobile devices and other equipment. Li-ion battery packs use highly robust protection-circuits to enhance safety. These batteries require reduced heat generation during charging/discharging, and as such, protection circuits with low power loss and high-density mounting are required. Toshiba offers thin MOSFETs with low on-resistance to meet these needs. Similar to the previously released SSM6N951L, this product uses an advanced micro process to further reduce its on-resistance, which helps it provide low power loss. An additional feature is low standby power consumption due to low leakage current from the gate (low gate-source leakage current), which helps batteries operate longer. SSM10N954L is housed in the package TCSPAC-153001 (1.49 mm x 2.98 mm, t: 0.11 mm (typ.)).

Resources

Parametric Columns

Block Diagram

Features

Low on-resistance : R_SS(on)=2.2 mΩ (typ.) at V_GS=3.8 V
Low gate-source leakage current : I_GSS=±1 μA (max) at V_GS=±8 V
Small size surface mounting TCSPAC-153001 package: 1.49 mm × 2.98 mm, t: 0.11 mm (typ.)
Common-drain structure that can be easily used in battery protection circuits

Applications

Devices with a Li-ion battery pack
Office and personal devices such as smartphones, tablets, power banks, and wearable devices, etc.
Consumer electronics devices such as game consoles, electric toothbrushes, compact digital cameras, and digital single-lens reflex cameras, etc.