Toshiba Electronic Devices and Storage Corporation

Automotive Grade 40 V L-TOGL N-Channel Power MOSFETs

Toshiba’s AEC-Q 40 V, 400 A, N-channel power MOSFETs is offered in a L-TOGL package

Image of Toshiba's AEC-Q N-Channel Power MOSFETs in L-TOGL™ PackageToshiba's 40 V N-channel power MOSFETs XPQR3004PB and XPQ1R004PB achieve ultra-low on-resistance, high drain current rating, and high heat dissipation by combining a high heat dissipation package L-TOGL (large transistor outline gull-wing leads) with the U-MOS IX-H chip process.

The L-TOGL package is equivalent in size to the existing TO-220SM(W) package, however, XPQR3004PB has greatly improved the current rating and significantly lowered on-resistance to 0.23 mΩ typ. L-TOGL’s optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.

With these features combined, Toshiba’s products offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications.

Features
  • AEC-Q101 qualified
  • Low drain-source on-resistance:
    • XPQR3004PB RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V)
    • XPQ1R004PB RDS(ON) = 0.80 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
  • Enhancement mode: Vth = 2.0 V to 3.0 V (VDS = 10 V, ID = 1.0 mA)
Applications
  • Automotive
  • Switching voltage regulators
  • Motor drivers
  • DC/DC converters

AEC-Q N-Channel Power MOSFETs in L-TOGL™ Package

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
40V U-MOS IX-H L-TOGL 1.0MOHMXPQ1R004PB,LXHQ40V U-MOS IX-H L-TOGL 1.0MOHM4500 - Immediate$29.88View Details
40V U-MOS IX-H L-TOGL 0.3MOHMXPQR3004PB,LXHQ40V U-MOS IX-H L-TOGL 0.3MOHM0 - Immediate$60.34View Details
Published: 2023-02-27

Related Product Highlight

Low-Voltage Power MOSFETs Toshiba MOSFETs LVMOS utilize the latest UMOS processes and come in a variety of voltages and packages to suit applications that require higher current.