UCC21750 Single-Channel Isolated Gate Driver for SiC/IGBT

Texas Instruments' UCC21750 galvanic isolated single-channel gate driver is designed for SiC MOSFETs and IGBTs up to 2,121 V_DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC21750 has up to ±10 A peak source and sink current. The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5 kV_RMS working voltage, 12.8 kV_PK surge immunity with longer than 40 years Isolation barrier life, and provides low part-to-part skew, and greater than 150 V/ns common-mode noise immunity (CMTI).

The UCC21750 includes state-of-art protection features such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature and voltage sensing, increasing the driver's versatility and simplifying the system design effort, size, and cost.