LMG2100R044 – 100 V, 35 A GaN Half-Bridge Power Stage

The LMG2100R044 from Texas Instruments is a high-performance, 100 V, 35 A half-bridge power stage that integrates two 4.4 mΩ enhancement-mode GaN FETs and a high-speed driver. Designed for high-efficiency and high-density power conversion, this device is ideal for applications requiring fast switching, low losses, and compact PCB layouts.

With a 90 V continuous and 100 V pulsed voltage rating, the LMG2100R044 supports high slew rate switching with minimal ringing, making it suitable for demanding power delivery systems. Its integrated driver simplifies design and reduces component count, while the compact package enhances thermal performance and layout flexibility.

This device supports both 3.3 V and 5 V logic levels and operates with a 5 V external bias supply. It is optimized for synchronous buck, boost, and half-bridge topologies in applications such as telecom, datacom, and industrial power supplies.