STGWA60V60DWFAG Automotive-Grade Trench Gate Field-Stop IGBTs

STMicroelectronics' STGWA60V60DWFAG is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Co-packed with the IGBT, a silicon carbide diode has been adopted: no recovery is shown at the turn-off of the SiC diode, and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.