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STGWA40IH65DF Insulated-Gate Bipolar Transistor (IGBT) IH Series
STMicroelectronics' STGWA40IH65DF 650 V, IGBT, IH series is designed to maximize efficiency for any resonant and soft-switching applications
STMicroelectronics' IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
Features
- Designed for soft commutation only
- Maximum junction temperature: TJ = 175°C
- VCE(sat) = 1.5 V (typ.) @ IC = 40 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Low drop voltage freewheeling co-packaged diode
- Positive VCE(sat) temperature coefficient
STGWA40IH65DF Insulated-Gate Bipolar Transistor (IGBT) IH Series
| Image | Manufacturer Part Number | Description | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | STGWA40IH65DF | IGBT TRENCH FS 650V 80A TO247 | 120 A | 2V @ 15V, 40A | 238 W | 0 - Immediate | $34.66 | View Details |
Published: 2019-05-10
Hong Kong, China