STGAP2SICSN Galvanically Isolated 4 A Single Gate Driver for SiC MOSFETs

STMicroelectronics' STGAP2SICSN galvanically isolated single-channel gate driver for silicon carbide power transistors comes in an SO8 standard package. It offers a suitable isolated driver for the silicon carbide in a small footprint exploiting the latest galvanic isolation technology, allowing the declaration of a 4.8 kV transient overvoltage. The gate driver is characterized by 4 A capability and can sustain a high voltage rail up to 1700 V. The dv/dt transient immunity is ±100 V/ns in the full temperature range, ensuring remarkable robustness against voltage transients.

The device is available in two configurations. They provide high flexibility and an optimized bill of material for external components according to the project strategy. The first option features separate output pins to optimize independent turn-on and turn-off by using independent resistors. The second configuration features a single output pin and the Miller Clamp function, preventing gate spikes during fast commutations in half-bridge topologies.

The CMOS/TTL compatible logic inputs down to 3.3 V ensure straightforward interfacing with microcontrollers and DSP peripherals. The STGAP2SICSN driver allows users to design high-reliability systems thanks to integrated protection functions like UVLO with optimized value for SiC MOSFETs and thermal shut down, which turns both driver outputs low to create high impedance in the half-bridge when the junction temperature reaches a set threshold.

Standby mode is available to reduce idle power consumption. The STGAP2SICSN is suitable for mid and high-power applications in power conversion and industrial applications. STGAP2SICSN comes in an SO8N package .