STGAP2SiCS Galvanically Isolated Single Gate Driver for SiC MOSFETs

STMicroelectronics' STGAP2SiCS is a high-voltage (up to 1200 V) gate driver manufactured with BCD6s technology. It is included in 6 kV galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. It is included in the 6 kV galvanic isolated family in a compact package. Device output can sink and source up to 4 A. Prevention from cross conduction is ensured by an interlocking function. The device has dedicated input pins for each output. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Delay matching between low-side and high-side section guarantees no cycle distortion and allows high-frequency operation. The STGAP2SiCS is available in two different configurations. The configuration with a separated output pin allows users to independently optimize turn-on and turn-off using a dedicated gate resistor. The configuration featuring a single output pin and Miller clamp function prevents gate spikes during fast commutations in half-bridge topologies.