STGAP2SICD 6 kV Galvanic Iso Dual Gate Driver for SiC FETs

STMicroelectronics' STGAP2SiCD is a 6 kV galvanic isolated dual-channel gate driver in an SO-36 wide package that is suitable for driving SiC power transistors. It provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The STGAP2SiCD offers a complete set of protections and maximum driving flexibility, exploiting the latest 6 kV galvanic isolation technology.

The gate driver is characterized by 4 A capability and rail-to-rail outputs, making it suitable for mid and high-power applications, such as power conversion, industrial drives, and inverters, and can sustain a high voltage rail up to 1200 V.

The dV/dt transient immunity is ±100 V/ns in the full temperature range, ensuring remarkable robustness against voltage transients. The device features a separate sink and source option for easy gate driving configuration and a Miller clamp function that prevents gate spikes during fast commutations in half-bridge topologies. The CMOS/TTL compatible logic inputs down to 3.3 V ensure straightforward interfacing with microcontrollers and DSP peripherals.

The device integrates specific undervoltage lockout for SiC and thermal shutdown protection to easily design high-reliability systems. In half-bridge topologies, the interlocking function prevents outputs from being high at the same time, avoiding shoot-through conditions in case of wrong logic input commands. A dedicated configuration pin can disable the interlocking function to allow independent and parallel operation of the two channels. The input to output propagation delay is within 75 ns, providing accurate PWM control. A standby mode is available to reduce idle power consumption.