STGAP2GS/STGAP2GSN Single-Channel Gate Drivers

STMicroelectronics' STGAP2GS and STGAP2GSN are galvanically isolated single-channel gate drivers for enhancement mode GaN power transistors in SO8 wide and SO8 standard packages, offering the suitable isolated driver for the GaN in a small footprint exploiting the latest galvanic isolation technology. The gate driver is characterized by a current capability of 2 A source and 3 A sink and rail-to-rail outputs, making the device suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications.

The dV/dt transient immunity is ±100 V/ns in the full temperature range, ensuring remarkable robustness against voltage transients. The device is available in separate sink and source configuration options for easy gate driving to optimize independent turn-on and turn-off using independent resistors.

The device integrates protection functions, including thermal shutdown, which turns driver output low when the junction temperature reaches a set threshold, and UVLO with an optimized level for enhancement-mode GaN FETs, which enables easy design for high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction.

The input-to-output propagation delay is within 45 ns, providing high PWM control accuracy. A standby mode is available to reduce idle power consumption. The CMOS/TTL compatible logic inputs down to 3.3 V ensure straightforward interfacing with microcontrollers and DSP peripherals.