RA1C030LDT5CL Ultra-low ON-resistance CSP-MOSFET (1006 size)

ROHM's RA1C030LD is offered in the DSN1006-3 wafer-level, chip-size package (1.0 mm x 0.6 mm) that takes advantage of ROHM’s proprietary IC process to achieve low power dissipation together with greater miniaturization. In terms of the figure of merit that expresses the relationship between conduction and switching losses (ON-resistance × Q_gd), an industry-leading value has been achieved that is 20% lower than standard package products in the same package (1.0 mm x 0.6 mm or smaller), contributing to a significantly smaller board area along with higher efficiency in a variety of compact devices. At the same time, ROHM’s unique package structure provides insulated protection for the side walls (unlike standard products in the same package with no protection). This reduces the risk of shorts due to contact between components in compact devices that must resort to high-density mounting due to space constraints, contributing to safer operation.