BM6GD11BFJ-LB 2500 VRMS 1-Channel Gate Driver

The ROHM BM6GD11BFJ-LB 1-channel gate driver with built-in isolation is capable of driving GaN HEMTs at high speeds. It has an isolation voltage of 2500 V_RMS, a maximum input/output delay time of 60 ns, and a minimum input pulse width of 65 ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an undervoltage lockout function (UVLO) is built into the input side (between V_CC1 and GND1) and the output side (between V_CC2 and GND2), respectively.