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M1000/M3000 Series MRAM
Renesas’ high-speed, high-performance, non-volatile MRAM offers superior reliability
Renesas' MRAM family of high-speed, high-performance 108 MHz non-volatile RAM offers superior reliability and greater than 20-year data retention. It does not require backup batteries or capacitors compared to non-volatile SRAM. The M30xx supports quad SPI SDR and DDR interfaces, operates from -40°C to +105°C (industrial plus version), and is available in SOIC or WSON package. The MRAM devices are ideal for high-speed, non-volatile memory applications such as program storage and data backup.
Features
- Non-volatile memory
- High endurance: >10E16 cycles
- Long data retention: >20 years
- Fast read and write, no wait writes
- Data protection with hardware protect mode (HPM), user-programmable/lockable special NVM, and software protect mode (SPM)
- No battery back-up required
- Utilizes advanced pMTJ STT-MRAM technology
- Memory density: 4 Mb to 16 Mb
- High-speed Quad SPI interface, up to 108 MHz SDR mode
- Lowest active write and read current
- Independent 256-byte user programmable and lockable NVM
- Industrial operating temperature: -40°C to +105°C
- Supply voltage: 1.8 V, 3 V
- Package: 8-pin SOIC and 8-pad WSON
Applications
- Industrial controls and automation
- Medical devices
- Wearables
- Network systems
- Storage/RAID
- Automotive
MRAM Microcontroller
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | M30082040054X0IWAY | IC RAM 8MBIT SPI/QUAD 54MHZ 8DFN | 371 - Immediate | $176.00 | View Details |
MRAM Evaluation Board
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
|  | M3016-EVK | MRAM PROGRAMMING KIT WITH 16MBIT | 0 - Immediate | $2,143.04 | View Details |
Published: 2020-06-17
Hong Kong, China