Power CSP MOSFETs

            Power CSP MOSFETs
                    Panasonic’s advanced 110 nm fine trench cell silicon technology
    

Image of Panasonic's Power CSP MOSFETs Panasonic, a worldwide leader in semiconductor products, announces the FJ3P02100L and FK3P02110L series of power CSP MOSFETs. The power CSP MOSFET series features Power Mount CSP Packaging (PMCP) that is comprised of a unique pad design and drain clip technology. This allows for a 5% improvement in thermal dissipation while simultaneously reducing the size by 80% over the conventional solutions. Panasonic’s advances in cell technology and wafer thinning fabrication have led to silicon with a 110 nm fine trench cell that provides 47% lower RDS(on) over the same sized conventional chip. By using this technology, this MOSFET series achieves higher power efficiency while reducing power consumption.

Features
Power mount CSP (PMCP) package allows for improved thermal dissipation by 5% while reducing the size by 80% over the conventional solutions AEC-Q101 qualified Fine trench silicon technology provides 47% lower RDS(on) over the same sized conventional chip, achieving higher power efficiency while reducing power consumption of the system		Size: FJ3P02100L: 2.0 x 2.0 x 0.33 mm, FK3P02110L: 1.8 x 1.6 x 0.33 mm R_DS(on): FJ3P02100L: 9.5 mΩ at V_GS=4.5 V (typ.), FK3P02110L: 12.5 mΩ at V_GS=2.5 V (typ.) Halogen free and RoHS qualified, with lead-free solder bumps

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