NXP Semiconductors

MMRF5017HS RF Power GaN Transistor

NXP’s MMRF5017HS high gain and high ruggedness make this device ideally suited for continuous wave, pulse, and broadband RF applications

Image of NXP’s MMRF5017HS RF Power GaN TransistorNXP's MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 MHz to 2200 MHz and is ideally suited for CW, pulse, and broadband RF applications. Performance is guaranteed for applications operating in the 30 MHz to 2200 MHz band.

Features    
  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Input matched for extended wideband performance
  • High ruggedness: > 10:1 VSWR
  • RoHS compliant
Applications  
  • Public mobile radios, including emergency service radios
  • Industrial, scientific, and medical
  • Wideband laboratory amplifiers
  • Wireless cellular infrastructure
Published: 2018-07-25

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