MMRF5017HS RF Power GaN Transistor

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Product Highlights > MMRF5017HS RF Power GaN Transistor

            MMRF5017HS RF Power GaN Transistor
                     NXP’s MMRF5017HS high gain and high ruggedness make this device ideally suited for continuous wave, pulse, and broadband RF applications
    

Image of NXP’s MMRF5017HS RF Power GaN Transistor NXP's MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 MHz to 2200 MHz and is ideally suited for CW, pulse, and broadband RF applications. Performance is guaranteed for applications operating in the 30 MHz to 2200 MHz band.

Features
Advanced GaN on SiC, offering high power density Decade bandwidth performance Input matched for extended wideband performance		High ruggedness: > 10:1 VSWR RoHS compliant
Applications
Public mobile radios, including emergency service radios Industrial, scientific, and medical		Wideband laboratory amplifiers Wireless cellular infrastructure