GD3100 IGBT Gate Drive IC

NXP's MC33GD3100 is an advanced, single-channel gate driver for IGBTs and SiC power MOSFETs. It features integrated galvanic isolation, low on-resistance drive transistors (which provide high charging and discharging current), low dynamic saturation voltage, and rail-to-rail gate voltage control for cost and space savings. Current and temperature sensing features minimize IGBT stress during faults. Accurate and configurable under voltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom. The MC33GD3100 autonomously manages severe faults then reports the faults and status via an INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self-test, control, and protection functions are included for the design of high-reliability ASIL C/D systems.