Automotive ASFETs for Repetitive Avalanche

Nexperia's automotive application-specific field-effect transistors (ASFETs) optimize MOSFETs to comfortably handle repetitive avalanche currents while maintaining a junction temperature below 175°C, offering a rugged device that delivers numerous system level savings. When using MOSFETs to power inductive loads such as driving solenoids, most circuit designs include additional components to protect the MOSFET when the load current continues to flow during switch off. This can range from highly efficient but expensive boost topologies that reuse the energy to the less efficient but more cost-effective approach of using a freewheeling diode. The simple alternative option of a repetitive avalanche set-up has historically only been possible using planar technology but Nexperia’s automotive ASFETs provide a modern trench alternative.

Features and Benefits

• Guaranteed repetitive avalanche performance, tested up to 1 billion cycles
• Rugged silicon technology combined with thermal performance of LFPAK, ensures die temperature stays below +175°C
• Simplicity of using a single MOSFET reduces BOM and circuit complexity, delivering system cost and space savings
• Modern trench alternative to older planar technologies 
• Offers increased efficiency and faster switching in comparison to freewheeling diode approach

Resources

• AN50003: Driving Solenoids in Automotive Applications
• AN10273: Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating