Silicon Carbide Semiconductor Discrete Products

Microchip Technology's silicon carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor, and higher operating temperature in industrial, transportation/automotive, medical, aerospace/aviation, defense, and communication applications. The next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive unclamped inductive switching (UIS) capability at rated on-resistance or current. These SiC MOSFETs maintain high UIS capability at approximately 10 joules to 25 joules per square centimeter (J/cm²) and robust short circuit protection. Microchip’s SiC Schottky barrier diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, the SiC MOSFET and SiC SBD die can be paired for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard.

Features

• Extremely low switching losses improve system efficiency
• High-power density for smaller footprint to reduce size and weight
• 3x more thermally conductive than silicon
• Reduced sink requirements to achieve smaller size and lighter weight
• High-temperature operation improves reliability at increased power density
• Proven reliability/ruggedness, supply chain, and support with Microchip quality, supply, and support

Applications

• Industrial: Motor drives, welding, UPS, SMPS, induction heating
• Transportation/automotive: Electric vehicle (EV) battery chargers, onboard chargers, hybrid electric vehicle (HEV) powertrains, DC-DC converters, energy recovery
• Smart energy: Photovoltaic (PV) inverters, wind turbines
• Medical: MRI power supplies, X-ray power supplies
• Commercial aviation: Actuation, air conditioning, power distribution
• Defense: Motor drives, auxiliary power supplies, and integrated vehicle systems