Uni/Bidirectional High-Power ESD Diodes

MCC’s CSPSBHC4V8LB, CSPSBHC6V3LB, and CSPHC4V8L uni/bidirectional single-line ESD protection devices are designed to deliver the pinnacle of performance. They leverage innovative redistribution layer (RDL) technology to bridge the chip terminal pad with the package terminal pad, enabling high-power realization and a compact CSP1006-2 package. These diodes enhance package density, electrical performance, and heat dissipation.

With peak pulse currents from 1350 W to 1600 W and V_RWM between 3.3 V and 4.8 V, these ESD diodes provide robust and reliable protection from electrostatic events. A low clamping voltage of 15 V to 16.5 V only adds to their performance.

Rigorously tested to meet IEC 61000-4-2 (ESD) immunity standards, these ESD diodes withstand air discharges of ±30 kV and contact discharges of ±30 kV. The diodes comply with IEC 61000-4-5 (lightning) standards of 90 A/100 A (8/20 μs), assuring reliable protection in challenging environments.

From consumer devices to critical telecommunication applications, MCC’s high-power ESD diodes are the ideal solution for unquestionable performance.