HMIC™ Silicon PIN Diode Switches

Covering the 0.05 GHz to 20 GHz frequency range, MACOM's SPDT MASW-002103-1363, SP3T MASW-003103-1364, and SP4T MASW-004103-1365 are usable up to 26 GHz. These devices are designed for use in broadband, low to moderate signal, and high-performance switch applications. Their glass encapsulated constructions are rugged and fully monolithic, all using sets of series and shunt-connected PIN diodes. Conducive to achieving high performance and minimizing the parasitics, these devices were fabricated using MACOM’s patented heterolithic microwave integrated circuit (HMIC) process resulting in low loss and high isolation through low millimeterwave frequencies. To protect the junction and airbridges during handling and assembly from scratch and impact, the top sides of the devices have been fully encapsulated with silicon nitride and an additional layer of polymer. In addition, gold metalized pads have been added to the back of the switches to produce a high-functioning, solderable surface-mount device.

Suitable for the DC biasing of PIN diode control circuits, the MABT-011000-1423 is designed for customers in need of a rugged HMIC device with low loss and high performance with exceptional repeatability through millimeter frequencies. The large vias reduce inductance, allowing customers to easily solder down the part, while the gold backside metallization provides RF and DC grounding. The device provides a dual function, acting as an RF-DC de-coupling network as well as the DC return and contains a series DC blocking capacitors. DC currents up to 60 mA and DC voltages up to 50 V may be used to maximize performance from the device.

Production quantities and samples of MASW-003103-1364, MASW-004103-1365, MASW-002103-1363 and MABT-01100-1423 are available from stock.