Infineon Technologies

GaN Power Transistors

Infineon CoolGaN™ highly efficient normally-off devices enable next-level power density

Image of Infineon GaN Power Transistors Infineon CoolGaN transistors feature fast turn-on and turn-off speeds, minimal switching losses, and a wide variety of package options. Qualified to rigorous criteria, CoolGaN exceeds industry standards and significantly enhances overall system performance while minimizing system costs and increasing ease of use.

Features
  • 60 V to 120 V e-mode transistors
  • Dual-side and bottom-side cooled package options
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Qualified beyond JEDEC standards
Benefits
  • Exceptional power density
  • Highest efficiency
  • Improved thermal management
  • Excellent reliability
  • Lowering BOM cost
  • Short time-to-market with ready-to-use reference boards
Applications
  • Audio amplifiers
  • Battery-powered tools
  • Drones
  • Photovoltaic
  • Robotics
  • SMPS
  • Telecommunication infrastructure
  • USB-C® adapters and chargers
Resources

GaN Power Transistors

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MV GAN DISCRETESIGC033S101XTMA1MV GAN DISCRETES4813 - Immediate$35.40View Details
MV GAN DISCRETESIGC033S10S1XTMA1MV GAN DISCRETES3998 - Immediate$35.40View Details
MV GAN DISCRETESIGB110S101XTMA1MV GAN DISCRETES4501 - Immediate$18.52View Details
MV GAN DISCRETESIGB110S10S1XTMA1MV GAN DISCRETES0 - Immediate$18.52View Details
MV GAN DISCRETESIGC019S06S1XTMA1MV GAN DISCRETES4008 - Immediate$35.40View Details
MV GAN DISCRETESIGC025S08S1XTMA1MV GAN DISCRETES4741 - Immediate$35.40View Details
MV GAN DISCRETESIGC037S12S1XTMA1MV GAN DISCRETES4350 - Immediate$35.40View Details
200 V G3 IN PQFN 3X5, 6.7 M,DSCIGC090S20S1XTMA1200 V G3 IN PQFN 3X5, 6.7 M,DSC0 - Immediate$8.07View Details
MV GAN DISCRETESIGB070S10S1XTMA1MV GAN DISCRETES4762 - Immediate$26.01View Details

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Published: 2025-07-22

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Publish Date: 2025-06-25