CoolSiC™ Easy 2B Power Modules

When silicon carbide (SiC) semiconductors are used to replace silicon IGBTs, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies. Built on state-of-the-art trench semiconductor technology, Infineon CoolSiC MOSFETs are optimized for both the lowest losses in the application and the highest reliability in operation.

In addition to discrete solutions, Infineon offers CoolSiC MOSFET power modules in several packages including Easy 1B and 2B packages, as well as Easy 3B, 62 mm, and EconoDUAL packages. They are available in multiple configurations, including 3-level, half-bridge, full-bridge, sixpack, and more. The Easy family is the best choice for customers looking for a flexible and scalable power module solution with very low module stray inductance and extended maximum gate-source voltages. Infineon offers the broadest base-plate-less package portfolio with 12 mm height. The flexible pin grid system is a perfect fit for customizing layout and pinout.

The FF4MR12W2M1H_B70 EasyDUAL™ 2B CoolSiC MOSFET half-bridge module (1200 V, 4 mΩ) and the FF6MR20W2M1H_B70 EasyDUAL 2B CoolSiC MOSFET half-bridge module (2000 V, 6 mΩ) offer superior gate-oxide reliability enabled by state-of-the-art trench technology and best-in-class switching and conduction losses. Both include an integrated NTC temperature sensor, PressFIT contact technology, and aluminum nitride ceramic.