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N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ

On Semiconductor's high-voltage super-junction MOSFET utilizes charge balance technology

Image of Fairchild's N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ SuperFET II MOSFET is On Semiconductor's first generation of high-voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate-charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC / DC power conversions for system miniaturization and higher efficiency.

Features
  • 650 V at TJ = 150°C
  • Max. RDS(ON) = 380 mΩ
  • Ultra-low gate charge (Typ Qg = 34 nC)
  • Low, effective output capacitance (Typ COSS eff = 97 pF)
  • 100% avalanche tested
Applications
  • Uninterruptible power supply
  • PDP TV
  • PC servers
  • Notebook PC
  • Lighting
  • LED TV
  • LCD TV
  • LCD monitor
  • EMS
  • DVD / set-top boxes
  • Desktop PC
  • DC-DC merchant power supply
  • Consumer appliances
  • AC-DC merchant power supply

SuperFET II MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPrice
MOSFET N-CH 600V 10.2A TO220F-3FCPF380N60-F152MOSFET N-CH 600V 10.2A TO220F-3600 V10.2A (Tc)0 - ImmediateSee Page for PricingView Details
Published: 2013-09-17

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